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Wideband GaAs MMIC driver power amplifiers for X and Ku bands

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

This paper presents two wideband GaAs MMIC driver power amplifiers (PAs) suitable for X and Ku bands. The required number of stages and number of branches in each stage for an M-stage driver PA architecture is analyzed. Design of wideband matching networks for monolithic microwave integrated circuit (MMIC) driver PAs is explained and design parameters of a cascaded K-section T matching network (MN) are derived. Finally, measurement results of 8-13 GHz and 13-19 GHz driver PAs, both implemented on 0.25 μm pseudomorphic high electron mobility transistor (pHEMT) technology, are demonstrated. Each driver PA delivers 31 dBm output power with 30 % nominal PAE over the operating frequency.

Original languageEnglish
Title of host publicationProceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538617946
DOIs
StatePublished - Oct 17 2017
Event2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017 - Waco, United States
Duration: Mar 30 2017Mar 31 2017

Publication series

NameProceedings of the 2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017

Conference

Conference2017 Texas Symposium on Wireless and Microwave Circuits and Systems, WMCS 2017
Country/TerritoryUnited States
CityWaco
Period03/30/1703/31/17

Keywords

  • GaAs
  • Power amplifier
  • bandwidth
  • matching network

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