Abstract
We present the design, novel fabrication techniques, and measurements of a SiGe HBT X-Band active mixer MMIC. By implementing microstrip transmission lines on an inexpensive, low-loss spin-on dielectric above the lossy Si substrate, we use the high-speed SiGe HBTs in 'classical' monolithic microwave circuits.
| Original language | English |
|---|---|
| Pages (from-to) | 655-658 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 2 |
| State | Published - 1996 |
| Event | Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA Duration: Jun 17 1996 → Jun 21 1996 |
Fingerprint
Dive into the research topics of 'X-band monolithic active mixer in SiGe HBT technology'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver