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X-band monolithic active mixer in SiGe HBT technology

  • M. Case
  • , S. A. Maas
  • , L. Larson
  • , D. Rensch
  • , D. Harame
  • , B. Meyerson
  • HRL Laboratories

Research output: Contribution to journalConference articlepeer-review

19 Scopus citations

Abstract

We present the design, novel fabrication techniques, and measurements of a SiGe HBT X-Band active mixer MMIC. By implementing microstrip transmission lines on an inexpensive, low-loss spin-on dielectric above the lossy Si substrate, we use the high-speed SiGe HBTs in 'classical' monolithic microwave circuits.

Original languageEnglish
Pages (from-to)655-658
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
StatePublished - 1996
EventProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA
Duration: Jun 17 1996Jun 21 1996

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