X-ray characterization of atomistic defects causing irradiation creep of SiC

Takaaki Koyanagi; David J. Sprouster; Lance L. Snead; Yutai Katoh

doi:10.13182/T123-33154

X-ray characterization of atomistic defects causing irradiation creep of SiC

Takaaki Koyanagi
, David J. Sprouster
, Lance L. Snead
, Yutai Katoh

Materials Science and Engineering

Stony Brook University

Oak Ridge National Laboratory

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	568-571
Number of pages	4
Journal	Transactions of the American Nuclear Society
Volume	123
Issue number	1
DOIs	https://doi.org/10.13182/T123-33154
State	Published - 2020
Event	2020 Transactions of the American Nuclear Society Winter Meeting, ANS 2020 - Virtual, Online, United States Duration: Nov 16 2020 → Nov 20 2020

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@article{4903cdb784774a2ab23634be12ab2c23,

title = "X-ray characterization of atomistic defects causing irradiation creep of SiC",

author = "Takaaki Koyanagi and Sprouster, \{David J.\} and Snead, \{Lance L.\} and Yutai Katoh",

year = "2020",

doi = "10.13182/T123-33154",

language = "English",

volume = "123",

pages = "568--571",

journal = "Transactions of the American Nuclear Society",

issn = "0003-018X",

publisher = "American Nuclear Society",

number = "1",

note = "2020 Transactions of the American Nuclear Society Winter Meeting, ANS 2020 ; Conference date: 16-11-2020 Through 20-11-2020",

}

TY - JOUR

T1 - X-ray characterization of atomistic defects causing irradiation creep of SiC

AU - Koyanagi, Takaaki

AU - Sprouster, David J.

AU - Snead, Lance L.

AU - Katoh, Yutai

PY - 2020

Y1 - 2020

UR - https://www.scopus.com/pages/publications/85118125134

U2 - 10.13182/T123-33154

DO - 10.13182/T123-33154

M3 - Conference article

SN - 0003-018X

VL - 123

SP - 568

EP - 571

JO - Transactions of the American Nuclear Society

JF - Transactions of the American Nuclear Society

IS - 1

T2 - 2020 Transactions of the American Nuclear Society Winter Meeting, ANS 2020

Y2 - 16 November 2020 through 20 November 2020

ER -

X-ray characterization of atomistic defects causing irradiation creep of SiC

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