X-ray excitation of DX centers in Si-doped Al0.35Ga0.65As

Yeong Ah Soh; G. Aeppli; Frank M. Zimmermann; E. D. Isaacs; Anatoly I. Frenkel

doi:10.1016/S0039-6028(00)00296-X

X-ray excitation of DX centers in Si-doped Al_0.35Ga_0.65As

Yeong Ah Soh
, G. Aeppli
, Frank M. Zimmermann
, E. D. Isaacs
, Anatoly I. Frenkel

Materials Science and Engineering

Stony Brook University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We report on the use of X-rays to excite DX centers in Si doped Al_0.35Ga_0.65As into their shallow donor state, as monitored by measuring the resulting persistent photoconductivity. The energy dependence of the photoconductivity closely follows the simultaneously detected X-ray fluorescence, indicating that photoexcitation of core holes is an efficient primary excitation step for the excitation of DX centers. However, there is no appreciable difference between the Ga and As K-edges, implying a non-local DX center excitation mechanism.

Original language	English
Pages (from-to)	214-218
Number of pages	5
Journal	Surface Science
Volume	451
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(00)00296-X
State	Published - Apr 20 2000
Event	DIET-8: 8th International Workshop on Desorption Induced by Electronic Transitions - Long Beach, NJ, USA Duration: Sep 27 1999 → Oct 1 1999

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@article{0df881b563194816bc29c8afab3ba0a9,

title = "X-ray excitation of DX centers in Si-doped Al0.35Ga0.65As",

abstract = "We report on the use of X-rays to excite DX centers in Si doped Al0.35Ga0.65As into their shallow donor state, as monitored by measuring the resulting persistent photoconductivity. The energy dependence of the photoconductivity closely follows the simultaneously detected X-ray fluorescence, indicating that photoexcitation of core holes is an efficient primary excitation step for the excitation of DX centers. However, there is no appreciable difference between the Ga and As K-edges, implying a non-local DX center excitation mechanism.",

author = "Soh, \{Yeong Ah\} and G. Aeppli and Zimmermann, \{Frank M.\} and Isaacs, \{E. D.\} and Frenkel, \{Anatoly I.\}",

year = "2000",

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doi = "10.1016/S0039-6028(00)00296-X",

language = "English",

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pages = "214--218",

journal = "Surface Science",

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publisher = "Elsevier B.V.",

number = "1",

note = "DIET-8: 8th International Workshop on Desorption Induced by Electronic Transitions ; Conference date: 27-09-1999 Through 01-10-1999",

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TY - JOUR

T1 - X-ray excitation of DX centers in Si-doped Al0.35Ga0.65As

AU - Soh, Yeong Ah

AU - Aeppli, G.

AU - Zimmermann, Frank M.

AU - Isaacs, E. D.

AU - Frenkel, Anatoly I.

PY - 2000/4/20

Y1 - 2000/4/20

N2 - We report on the use of X-rays to excite DX centers in Si doped Al0.35Ga0.65As into their shallow donor state, as monitored by measuring the resulting persistent photoconductivity. The energy dependence of the photoconductivity closely follows the simultaneously detected X-ray fluorescence, indicating that photoexcitation of core holes is an efficient primary excitation step for the excitation of DX centers. However, there is no appreciable difference between the Ga and As K-edges, implying a non-local DX center excitation mechanism.

AB - We report on the use of X-rays to excite DX centers in Si doped Al0.35Ga0.65As into their shallow donor state, as monitored by measuring the resulting persistent photoconductivity. The energy dependence of the photoconductivity closely follows the simultaneously detected X-ray fluorescence, indicating that photoexcitation of core holes is an efficient primary excitation step for the excitation of DX centers. However, there is no appreciable difference between the Ga and As K-edges, implying a non-local DX center excitation mechanism.

UR - https://www.scopus.com/pages/publications/0033732934

U2 - 10.1016/S0039-6028(00)00296-X

DO - 10.1016/S0039-6028(00)00296-X

M3 - Conference article

SN - 0039-6028

VL - 451

SP - 214

EP - 218

JO - Surface Science

JF - Surface Science

IS - 1

T2 - DIET-8: 8th International Workshop on Desorption Induced by Electronic Transitions

Y2 - 27 September 1999 through 1 October 1999

ER -

X-ray excitation of DX centers in Si-doped Al_0.35Ga_0.65As

Abstract

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