X-ray studies of interfacial roughness in ZnSe GaAs heterostructures

A. Krol; C. J. Sher; S. C. Woronick; Y. H. Kao; R. J. Dalby; D. A. Cammack; R. N. Bhargava

doi:10.1016/0749-6036(88)90214-5

X-ray studies of interfacial roughness in ZnSe GaAs heterostructures

A. Krol
, C. J. Sher
, S. C. Woronick
, Y. H. Kao
, R. J. Dalby
, D. A. Cammack
, R. N. Bhargava

Physics

University at Buffalo

Research output: Contribution to journal › Article › peer-review

Abstract

The angular dependence of x-ray reflectivity and fluorescence yield of ZnSe GaAs heterostructures was measured. By an analysis based on scalar scattering, the root-mean-square values of two roughness parameters pertaining to the top surface and the buried interface have been determined.

Original language	English
Pages (from-to)	435-437
Number of pages	3
Journal	Superlattices and Microstructures
Volume	4
Issue number	4-5
DOIs	https://doi.org/10.1016/0749-6036(88)90214-5
State	Published - 1988

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10.1016/0749-6036(88)90214-5

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@article{742d10fb51b04f9bb57925d2fcb8c96d,

title = "X-ray studies of interfacial roughness in ZnSe GaAs heterostructures",

abstract = "The angular dependence of x-ray reflectivity and fluorescence yield of ZnSe GaAs heterostructures was measured. By an analysis based on scalar scattering, the root-mean-square values of two roughness parameters pertaining to the top surface and the buried interface have been determined.",

author = "A. Krol and Sher, \{C. J.\} and Woronick, \{S. C.\} and Kao, \{Y. H.\} and Dalby, \{R. J.\} and Cammack, \{D. A.\} and Bhargava, \{R. N.\}",

year = "1988",

doi = "10.1016/0749-6036(88)90214-5",

language = "English",

volume = "4",

pages = "435--437",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Elsevier Ltd",

number = "4-5",

}

TY - JOUR

T1 - X-ray studies of interfacial roughness in ZnSe GaAs heterostructures

AU - Krol, A.

AU - Sher, C. J.

AU - Woronick, S. C.

AU - Kao, Y. H.

AU - Dalby, R. J.

AU - Cammack, D. A.

AU - Bhargava, R. N.

PY - 1988

Y1 - 1988

N2 - The angular dependence of x-ray reflectivity and fluorescence yield of ZnSe GaAs heterostructures was measured. By an analysis based on scalar scattering, the root-mean-square values of two roughness parameters pertaining to the top surface and the buried interface have been determined.

AB - The angular dependence of x-ray reflectivity and fluorescence yield of ZnSe GaAs heterostructures was measured. By an analysis based on scalar scattering, the root-mean-square values of two roughness parameters pertaining to the top surface and the buried interface have been determined.

UR - https://www.scopus.com/pages/publications/0024143350

U2 - 10.1016/0749-6036(88)90214-5

DO - 10.1016/0749-6036(88)90214-5

M3 - Article

SN - 0749-6036

VL - 4

SP - 435

EP - 437

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4-5

ER -

X-ray studies of interfacial roughness in ZnSe GaAs heterostructures

Abstract

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